Транзистор FQPF18N50V2 TO-220F, 18N50 MOSFET N-ch 500В 18А

Транзистор FQPF18N50V2 /FAIR/ в корпусе TO-220F: MOSFET, N-ch, 500В, 18А.

• 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V

• Low gate charge ( typical 42 nC)

• Low Crss ( typical 11 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.